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A High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Towards Improved Sensing Capabilities for Lab on a Chip Devices

Wednesday, 9 October 2019 at 12:15

Add to Calendar ▼2019-10-09 12:15:002019-10-09 13:15:00Europe/LondonA High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Towards Improved Sensing Capabilities for Lab on a Chip DevicesPoint-of-Care Diagnostics, Global Health and Biosensors 2019 in Coronado Island, CaliforniaCoronado Island, CaliforniaSELECTBIOenquiries@selectbiosciences.com

The transduction of chemical signal using field effect transistors (FETs) is one of the candidate mechanisms for the development of label free sensing. Miniaturisation of the devices using 2D and 1D materials has been a successful strategy that has led to very low concentration limits. However, there are currently no clinical applications using label free FET sensing due to problems of reliability and low signal. We propose an alternative design based on a high aspect ratio FinFETs. Our FinFETs show higher total signal and improved linearity for the devices with higher aspect ratio. In addition, FinFETs promise the optimization of reliability and efficiency in terms of limits of detection, for which the interplay of the size and geometry of the sensor with the diffusion of the analytes plays a pivotal role. We developed fabrication processes for the production of these sensors using either high resolution electron beam lithography or large-throughput optical lithography combined with controlled plane dependent wet anisotropic etching of silicon. The fabrication method developed is fully CMOS compatible and ease integration within Lab on a Chip devices is foreseen. We will show our results of reliability on the production of these sensors and performances.